제품소개 > Perfluoro O-RINGS > KALREZ(SEMICON)
KALREZ(SEMICON)
Process Type |
Typical Seal Temperature |
Typical Process Environment |
Suggested Products* |
Comments | Typical Applications |
|
---|---|---|---|---|---|---|
Plasma Processes |
PECVE ALD |
25℃-200℃ |
TMS, DEMS, TEOS, SiH4 , C3H NH3, SiF4 , O2 N2O, NF3 |
9100 9500 |
9100 - Low erosion 9500-Excellent 9300- Specifically |
Dynamic :
|
HDPCVD | 25℃-200℃ |
TEOS, SiH4, NH3, SiF4, O2, C2F6, N2O, NF3, CF4 |
9100 9500 | |||
SACVD | 25℃-250℃ | TeP, TEBO, TEOS, O3, NF3 | 9500 8002 | |||
Ash/Strip | 25℃-250℃ |
O2, CF4, CHF3, NH3, H2O Vapor Forming Gas |
9300 9500 | |||
Dielectric (Oxide)Etch |
25℃-200℃ |
CF4, C3F8, CHF3, SF6, O2, H2 |
9300 9500 | |||
Conductor (Poly/Metal)Etch |
25℃-200℃ |
CF4, CHF3, HBr, BCI3, CCI4, CI2 |
9300 9500 | |||
Thermal Processes |
Metal CVD ALD LPCVD |
25℃-300℃ |
Organic precursors, WF6, TiCl4, SiH4, HF, F2, CI2, CIF3, NF3, H2O Vapor, O2, O3 |
8900 9100 |
8900-Suggested 8475-Suggested |
|
Oxidation Diffusion |
150℃-300℃ |
N2, O2, H2O, HCI, CI2 |
8900 8475 | |||
Lamp Anneal RTP |
150℃-300℃ |
Resistance to IR absorption |
8475 | |||
Wet Processes |
Wafer Prep | 25℃-125℃ |
UPDI, Piranha, SC-1, SC-2, O3, HF(49%) |
6375UP |
6375UP-General purpose product for all wet process applications. |
|
Etching | 25℃-180℃ |
HNO3, HF, H2O, H3PO4, HNO3 |
||||
Photolithog- raphy |
25℃-125℃ |
H2SO4 + Oxidant, Organic Acids, nMP |
||||
Stripping | 25℃-125℃ |
nMP/Alkanolamine Hydroxlamine |
6375UP 1050LF | |||
Copper Plating | 25℃-100℃ |
CuSO4 Solution H2SO4, H2O2 |
6375UP 1050LF |