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칼레즈(SEMICON)

Process
Type
Typical Seal
Temperature
Typical Process
Environment
Suggested
Products*
Comments Typical
Applications
Plasma
Processes
PECVE
ALD
25℃-200℃ TMS, DEMS,
TEOS, SiH4 , C3H
NH3, SiF4 , O2
N2O, NF3
9100 9500

9100 - Low erosion
rate and uitra-low
particle generation
in harsh plasma
environments

9500-Excellent
resistance to ozone,
ammonia, water
vapor and plasma
radicals

9300- Specifically
designed fo proce-
sses where the
plasma environment
is a combination of
ions(”physical”) and
radicals(”chemical”)

Dynamic :
  • Door seals
  • Gate valves
    Pendulum valves
Static :
  • Chamber lid seals
  • Exhaust valves
  • Gas

    inlet/outlet/mixing block seals

  • Window seals
  • Center rings
Camier :
  • Wafer/FPD Support/Transp- ort
HDPCVD 25℃-200℃ TEOS, SiH4, NH3,
SiF4, O2, C2F6,
N2O, NF3, CF4
9100 9500
SACVD 25℃-250℃ TeP, TEBO, TEOS, O3, NF3 9500 8002
Ash/Strip 25℃-250℃ O2, CF4, CHF3,
NH3, H2O
Vapor Forming Gas
9300 9500
Dielectric
(Oxide)Etch
25℃-200℃ CF4, C3F8, CHF3,
SF6, O2, H2
9300 9500
Conductor
(Poly/Metal)Etch
25℃-200℃ CF4, CHF3, HBr,
BCI3, CCI4, CI2
9300 9500
Thermal
Processes
Metal CVD
ALD
LPCVD
25℃-300℃ Organic precursors,
WF6, TiCl4, SiH4,
HF, F2, CI2, CIF3,
NF3, H2O Vapor,
O2, O3
8900 9100

8900-Suggested
product for metal
CVD, ALD, LPCVD,
oxidation and
diffusion processes.

8475-Suggested
product for lamp
anneal and RTP
processes.

  • Quartz chamber
    seal
  • Fittings
  • Center ring
  • Plenum seals
Oxidation
Diffusion
150℃-300℃ N2, O2, H2O,
HCI, CI2
8900 8475
Lamp Anneal
RTP
150℃-300℃ Resistance to IR
absorption
8475
Wet
Processes
Wafer Prep 25℃-125℃ UPDI, Piranha,
SC-1, SC-2, O3,
HF(49%)
6375UP 6375UP-General
purpose product for
all wet process
applications.
  • Door/lid seals
  • Drain seals
  • Seals for chem-
    ical containers
  • Fittings
  • Seals for filters/
    connectors
  • Flow meters
Etching 25℃-180℃ HNO3, HF, H2O,
H3PO4, HNO3
Photolithog-
raphy
25℃-125℃ H2SO4 + Oxidant,
Organic Acids,
nMP
Stripping 25℃-125℃ nMP/Alkanolamine
Hydroxlamine
6375UP 1050LF
Copper Plating 25℃-100℃ CuSO4 Solution
H2SO4, H2O2
6375UP 1050LF
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